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You are here: Home / Datasheets and Components / IRFZ44 Datasheet [55V 49 Amp N-channel MOSFET]

IRFZ44 Datasheet [55V 49 Amp N-channel MOSFET]

Last Updated on May 18, 2026 by Swagatam 12 Comments

The IRFZ44 is a popular N-channel power MOSFET designed for high current applications. Here is a detailed datasheet of the IRFZ44 MOSFET:

Table of Contents
  • General Information:
  • Pinout Configuration:
  • Electrical Characteristics:
  • Thermal Characteristics:
  • Features:
  • Applications:
    • Inverter circuit using IRFZ44
    • Conclusion

General Information:

  • Manufacturer: International Rectifier (now part of Infineon Technologies)
  • Model: IRFZ44
  • Type: N-channel power MOSFET
  • Package: TO-220AB

Pinout Configuration:

The following shows the pinout configuration for the MOSFET IRFZ44:

Electrical Characteristics:

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 49A @ 25°C, 35A @ 100°C
  • Maximum Power Dissipation (PD): 94W @ 25°C
  • Gate-Source Voltage (VGS): ±20V
  • Drain-Source On-Resistance (RDS(on)): 17.5mΩ @ VGS=10V, ID=27A
  • Gate Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 1320pF @ VDS=25V, VGS=0V, f=1MHz
  • Output Capacitance (Coss): 310pF @ VDS=25V, VGS=0V, f=1MHz
  • Reverse Transfer Capacitance (Crss): 225pF @ VDS=25V, VGS=0V, f=1MHz
  • Total Gate Charge (Qg): 47nC @ VGS=10V, ID=27A
  • Gate-Source Charge (Qgs): 7nC @ VGS=10V, ID=27A
  • Gate-Drain Charge (Qgd): 12nC @ VGS=10V, ID=27A

Thermal Characteristics:

  • Thermal Resistance, Junction-to-Ambient (RθJA): 62°C/W
  • Thermal Resistance, Junction-to-Case (RθJC): 1.5°C/W
  • Operating Junction Temperature Range (TJ): -55°C to 175°C
  • Storage Temperature Range (TSTG): -55°C to 175°C

Features:

  • Low RDS(on) for high efficiency
  • Fast switching speed for improved performance
  • High current handling capability
  • Low gate drive requirements
  • High input impedance
  • Avalanche energy rated
  • RoHS compliant

Applications:

The MOSFET IRFZ44 is commonly used for the following applications:

  • DC-DC converters
  • DC to AC 50 Hz, 60 Hz Inverters
  • Switching power supplies
  • Motor control
  • Solenoid and relay drivers
  • High frequency inverters
  • Class D audio amplifiers
  • Electronic ballasts
  • Battery chargers
  • Welding equipment

Inverter circuit using IRFZ44

IRFZ44 inverter circuit

Conclusion

Overall, the IRFZ44 MOSFET is a high-performance, reliable device that can be used in a wide range of applications. Its low RDS(on), fast switching speed, and high current handling capability make it an ideal choice for power electronics applications.

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Filed Under: Datasheets and Components Tagged With: 55V, Channel, Datasheet, IRFZ44, MOSFET

About Swagatam

I am an electronics engineer and doing practical hands-on work from more than 15 years now. Building real circuits, testing them and also making PCB layouts by myself. I really love doing all these things like inventing something new, designing electronics and also helping other people like hobby guys who want to make their own cool circuits at home.

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Reader Interactions

Questions & Answers

Total Posts: 12
Newest Oldest
Madison
June 20, 2023 • 3 years ago #143583

Hello, would this mosfet be ok being driven at 33kHz from an SG3525 without a mosfet driver?

Reply
SwagatamAdmin
June 21, 2023 • 3 years ago #143591

Yes, it’s OK, just make sure to incorporate a gate resistor and a diode as indicated in the following diagram:

howtopreventmosfetfromburning

The resistor value can be 10 ohms

Reply
Madison
June 21, 2023 • 3 years ago #143585

Hello could I drive this high frequency with a TL494? 30kHz

Reply
SwagatamAdmin
June 21, 2023 • 3 years ago #143592

Yes you can.

Reply
Madison
June 22, 2023 • 3 years ago #143609

Thank you very much! I will add the gate diode hopefully that will help my mosfet heating problem.

Reply
SwagatamAdmin
June 22, 2023 • 3 years ago #143610

Sure, no problem!

Reply
Madison
June 22, 2023 • 3 years ago #143611

I have read several places that switching off quickly is much more important than switching on quickly. Do you have any idea why this could be?

Reply
SwagatamAdmin
June 23, 2023 • 3 years ago #143617

Yes that’s correct, that is why we use a BJT driver stage at the gate or a reverse diode across the gate resistor. Quick switch OFF of the gate ensures quick discharge of the internal capacitance of the MOSFET gate and lower heat on the MOSFET.

Reply
Madison
June 23, 2023 • 3 years ago #143630

Nice! Even would the diode would’nt the switch off time be limited by the current sink capability of the SG3525?

Reply
SwagatamAdmin
June 23, 2023 • 3 years ago #143635

Without the diode the current has to pass through the gate resistor which can be slower, with a diode it becomes faster.

Reply
Madison
June 23, 2023 • 3 years ago #143640

Is this diode important with an IGBT as well?

Reply
SwagatamAdmin
June 23, 2023 • 3 years ago #143644

I think yes, since an IGBT also has a gate just like a MOSFET

Reply

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