The IRF540N is an advanced HEXFET N-channel power mosfet,
from International Rectifier. The device is extremely versatile with its
performance capabilities and thus becomes ideal for numerous electronic applications.
The datasheet and pin out details of the device has been explained in the
following article.
from International Rectifier. The device is extremely versatile with its
performance capabilities and thus becomes ideal for numerous electronic applications.
The datasheet and pin out details of the device has been explained in the
following article.
Main Features:
Sophisticated, cutting-edge processing technology used.
Extremely low resistance across load path.
Flexible dv/dt plot.
Operating temperature tolerance capacity as high as 175
degrees Celsius.
degrees Celsius.
Very fast switching capability.
Fully resistant against avalanche or peak surge currents.
Maximum Absolute Ratings
(maximum tolerable limits of IRF540N) are stated as under:
(maximum tolerable limits of IRF540N) are stated as under:
ID = 33 Amps Max at 10V (VGS), It’s
the maximum current handling capacity of the device across the drain to the
source, via the load, with gate voltage at 10V, at normal temperatures (25
to 35 degrees Cel.)
the maximum current handling capacity of the device across the drain to the
source, via the load, with gate voltage at 10V, at normal temperatures (25
to 35 degrees Cel.)
IDM = 110 Amps Max, It’s the maximum current handling
capacity of the device across the drain to the source, via the load, in a
pulsed mode (NOT continuous).
capacity of the device across the drain to the source, via the load, in a
pulsed mode (NOT continuous).
PD = 130 Watts Max, The maximum power the FET can dissipate with and infinite (cool) heat sink
VGS = 10 Volts typical +/-20%. It’s the maximum trigger
voltage that may be applied across the gate and the source for optimal
performance.
voltage that may be applied across the gate and the source for optimal
performance.
V(BR)DSS= 100 volts, It’s the maximum
voltage that may be applied across drain to source of the device.
voltage that may be applied across drain to source of the device.
Applications Areas
This device is best suited for high power DC switching
applications, such as in high current SMPS power supplies, compact ferrite
inverter circuits, iron core inverter circuits, buck and boost converters,
power amplifiers, motor sped controllers, robotics etc.
applications, such as in high current SMPS power supplies, compact ferrite
inverter circuits, iron core inverter circuits, buck and boost converters,
power amplifiers, motor sped controllers, robotics etc.
How to Use or Connect
IRF540N MOSFET in an electronic circuit.
IRF540N MOSFET in an electronic circuit.
It’s quite simple, and must be done as explained in the following points:
- The source should be preferably connected to the ground or
the negative line of the supply. - The drain should be connected to the positive terminal of
the supply via the load which needs to be operated by the device. - Finally, the gate which is the trigger lead of the device
should be connected to the trigger point of the circuit, this trigger input
should be preferably a +5V supply from a CMOS logic source. - If the trigger input is not a logic source make sure the
gate is permanently connected to ground via a high value resistor. - When the device is being used for switching inductive loads
like a transformer or a motor, a flyback diode should be normally connected
across the load, with the cathode of the diode connected to the positive side
of the load. However, the IRF540N has a built in avalanche protective diode,
therefore typically an external diode may not be required; it may be
incorporated in case yu wish to provide extra safety to the device.
Corrections to the above explanations is welcome.
Sir,
Pls give me circuit dia of irf540 inorder to control speed of a dc fan (12 v )
Dhanlal, you can try the following design
http://www.homemade-circuits.com/2012/05/make-this-pwm-based-dc-motor-speed.html
Pls i wwnt to make a self chargin inverter i hv made plans of usin a normal power suply to gv 12 volt den it z converted to 30 v bt with low current usin 555 dc to dc converter den d 30 volts wit low current output z a agin conected to a current regulatin circuit to make my current upto 10A wich will b enough to charge my 24 volts battery…pls do u tink it z feasible
sorry, I can't figure it out, looks difficult
Sir is there anything wrong with connecting two or three irf3205 fet in parallel in an inverter that is supposed to work on 12v 36amp battery? If yes suggest the mosfet and the number to connect in parallel as i only want 300watt at the output and (2) how can i know a 350va transformer by just physically looking at it.
victory, single IRF3205 mosfets would be enough for achieving the required 300 watts…more in parallel won't be required, just put these on good heatsinks.
you can expect a 350vA trafo to be minimum 8 to 12kg heavy
how much the channel length for any mosfet ?
please tell me range
sorry, i did not understand your question….
sir , it is given that pd = 130w max , so at vds=24v if the current ids is 33a then power = 24 * 33 =792w ??? so safe ids is 130/24 = 5.41a , is it right ??
pd = power dissipation in the form of heat, it's not power handling capacity.
when Id is shown 33amps that means it would be able to handle 33amps upto 100V
ok sir.. but if a mosfet can hold 33 amps , what is the need of connecting more mosfets in parallel?? in a 24 v invetrer 33*24*2=1.5kw , so upto 1.5kw we can use only 1 mosfet?? when i used single mosfet when i put a tv mosfet burnt off , why so sir??
yes there's no need to put more in parallel but be careful with the heat dissipation, use very large finned type heatsinks and probably a fan to cool it.
33 is it's last limit so better use upto 30amps only.
ok… i have used 3 * 2 mosfets for my 200va modified sine wave inveter..
Good Info. on MOSFET.
Thank you,
Regards,
Pravpa
…welcome Pravpa!