IRF510 Datasheet [100V, 5.6 Amp, N-Channel MOSFET]

The IRF510 is a popular N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) commonly used in electronic circuits for various applications, including audio amplifiers, power supplies, and switching circuits.

It is rated with a maximum voltage of 100 volts and a maximum current of 5.6 amps. These ratings makes the device suitable for medium to high power applications. The IRF510 MOSFET features a low on-resistance. Due to this feature it is able to switch optimal amounts of currents without dissipating too much power in the form of heat.

Electrical Characteristics:

• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 5.6A
• Power Dissipation (PD): 43W
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 50nC
• Threshold Voltage (VGS(th)): 2V to 4V
• Drain-Source On-Resistance (RDS(on)): 0.5 ohms

Thermal Characteristics:

• Junction Temperature (Tj): -55°C to 175°C
• Thermal Resistance - Junction to Case (RθJC): 1.4°C/W
• Thermal Resistance - Junction to Ambient (RθJA): 62.5°C/W

Pin Configuration:

The IRF510 MOSFET has three pins: the drain (D), the gate (G), and the source (S). The pinout configuration is as follows:

• Pin 1: Gate (G)
• Pin 2: Drain (D)
• Pin 3: Source (S)

Package Information:

The IRF510 MOSFET is available in the TO-220 package, which is a through-hole package with a single mounting hole. The package dimensions are as follows:

• TO-220 Package: 10.67mm x 15.87mm x 4.83mm

Typical Applications:

The IRF510 MOSFET is commonly used in power switching applications, such as:

• Power supplies
• Motor control
• Audio amplifiers
• RF amplifiers
• Switching regulators
• DC-DC converters

Simple Motor Controller Circuit

The IRF510 MOSFET can be used for making a simple DC motor speed controller circuit, as shown in the following diagram:

Absolute Maximum Ratings:

Please make sure the MOSFET IRF510 is not operated above the following absolute maximum ratings.

• Maximum Drain-Source Voltage: 100V
• Maximum Continuous Drain Current: 5.6A
• Maximum Power Dissipation: 43W
• Maximum Junction Temperature: 175°C
• Maximum Gate-Source Voltage: ±20V

Other Features:

• N-Channel MOSFET
• Low Gate Threshold Voltage
• Low On-Resistance
• High Input Impedance

Note: This information is taken from the IRF510 datasheet published by Infineon Technologies. Actual values may vary based on specific manufacturer and production batch