IRF540N MOSFET Specifications, Datasheet Explained


The IRF540N is an advanced HEXFET N-channel power mosfet,
from International Rectifier. The device is extremely versatile with its
performance capabilities and thus becomes ideal for numerous electronic applications.
The datasheet and pin out details of the device has been explained in the
following article.

Main Features:

Sophisticated, cutting-edge processing technology used.
Extremely low resistance across load path.
Flexible dv/dt plot.
Operating temperature tolerance capacity as high as 175
degrees Celsius.
Very fast switching capability.
Fully resistant against avalanche or peak surge currents.
Maximum Absolute Ratings
(maximum tolerable limits of IRF540N) are stated as under:

ID = 33 Amps Max at 10V (VGS), It’s
the maximum current handling capacity of the device across the drain to the
source, via the load, with gate voltage  at 10V, at normal temperatures (25
to 35 degrees Cel.)

IDM = 110 Amps Max, It’s the maximum current handling
capacity of the device across the drain to the source, via the load, in a
pulsed mode (NOT continuous).
PD = 130 Watts Max, The maximum power the FET can dissipate with and infinite (cool) heat sink
VGS = 10 Volts typical +/-20%. It’s the maximum trigger
voltage that may be applied across the gate and the source for optimal
performance.
V(BR)DSS= 100 volts, It’s the maximum
voltage that may be applied across drain to source of the device.
Applications Areas

This device is best suited for high power DC switching
applications, such as in high current SMPS power supplies, compact ferrite
inverter circuits, iron core inverter circuits, buck and boost converters,
power amplifiers, motor sped controllers, robotics etc.
How to Use or Connect
IRF540N MOSFET in an electronic circuit.

It’s quite simple, and must be done as explained in the following points:

  • The source should be preferably connected to the ground or
    the negative line of the supply.
  • The drain should be connected to the positive terminal of
    the supply via the load which needs to be operated by the device.
  • Finally, the gate which is the trigger lead of the device
    should be connected to the trigger point of the circuit, this trigger input
    should be preferably a +5V supply from a CMOS logic source.
  • If the trigger input is not a logic source make sure the
    gate is permanently connected to ground via a high value resistor.
  • When the device is being used for switching inductive loads
    like a transformer or a motor, a flyback diode should be normally connected
    across the load, with the cathode of the diode connected to the positive side
    of the load. However, the IRF540N has a built in avalanche protective diode,
    therefore typically an external diode may not be required; it may be
    incorporated in case yu wish to provide extra safety to the device.
Corrections to the above explanations is welcome.