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500V, 20A MOSFET IRFP460 Datasheet, Pinouts

Last Updated on February 19, 2025 by Swagatam Leave a Comment

The IRFP460 MOSFET is an N-channel MOSFET. It is rated for a drain-source breakdown voltage of 500V and a continuous drain current of 20A. This MOSFET is a third-generation device designed with fast switching and low on-resistance in mind. Specifically, it has a maximum drain-source on-state resistance of 0.27 Ohms.

Table of Contents
  • IRFP460 MOSFET Main Characteristics
  • Pinout Details
  • Absolute Maximum Ratings
  • Thermal Resistance
  • Electrical Characteristics (@ T_J = 25°C)
  • Source-Drain Ratings and Body Diode Characteristics

Basically this IRFP460 MOSFET is suitable for switching applications at high voltages making it ideal for use in switch mode power supplies, DC-to-DC converters, motor drivers, inverters, and other power conversion applications.

It can handle up to 80A pulses and can dissipate 280W of power if adequate cooling is provided.

IRFP460 MOSFET Main Characteristics

  • Type: N-Channel
  • Maximum Drain to Source Voltage: 500 Volts
  • Maximum Drain to Source Current: 20 Amps
  • Minimum Drain to Source Resistance = 0.27 Ohms

Pinout Details

MOSFET IRFP460 pinout

Absolute Maximum Ratings

ParameterDescriptionValueUnit
I_D @ T_C = 25°CContinuous Drain Current at 25°C20A
I_D @ T_C = 100°CContinuous Drain Current at 100°C13A
I_DMPulsed Drain Current (short bursts)80A
P_D @ T_C = 25°CMaximum Power Dissipation280W
Linear Derating FactorPower dissipation reduction per °C above 25°C2.2W/°C
V_GSMaximum Gate-to-Source Voltage±20V
E_ASSingle Pulse Avalanche Energy960mJ
I_ARAvalanche Current (short duration)20A
E_ARRepetitive Avalanche Energy28mJ
dv/dtPeak Diode Recovery Rate3.5V/ns
T_J, T_STGOperating & Storage Temperature Range-55 to 150°C
Soldering TemperatureMax soldering temperature (for 10s, 1.6mm from case)300°C
Mounting TorqueRecommended screw torque for mounting10 (1.1)lbf-in (N·m)

Thermal Resistance

ParameterDescriptionTypical ValueMax ValueUnit
R_θJCThermal resistance from junction to case—0.45°C/W
R_θCSThermal resistance from case to sink (greased)0.24—°C/W
R_θJAThermal resistance from junction to ambient—40°C/W

Electrical Characteristics (@ T_J = 25°C)

ParameterDescriptionMinTypMaxUnit
V_(BR)DSSDrain-to-Source Breakdown Voltage500——V
ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient—0.63—V/°C
R_DS(on)Static Drain-to-Source On-Resistance——0.27Ω
V_GS(th)Gate Threshold Voltage2.0—4.0V
g_fsForward Transconductance13——S
I_DSSDrain-to-Source Leakage Current——25μA
I_GSSGate Leakage Current——±100nA
Q_GTotal Gate Charge——210nC
Q_GSGate-to-Source Charge—29—nC
Q_GDGate-to-Drain "Miller" Charge—110—nC
t_d(on)Turn-On Delay Time—18—ns
t_rRise Time—59—ns
t_d(off)Turn-Off Delay Time—110—ns
t_fFall Time—58—ns
L_DInternal Drain Inductance—5.0—nH
L_SInternal Source Inductance—13—nH
C_issInput Capacitance—4200—pF
C_ossOutput Capacitance—870—pF
C_rssReverse Transfer Capacitance—350—pF

Source-Drain Ratings and Body Diode Characteristics

ParameterDescriptionMinTypMaxUnit
I_SContinuous Source Current (Body Diode)——20A
I_SMPulsed Source Current (Body Diode)——80A
V_SDDiode Forward Voltage——1.8V
t_rrReverse Recovery Time570—860ns
Q_rrReverse Recovery Charge5.7—8.6μC
t_onForward Turn-On TimeIntrinsic turn-on time is negligible———

Source: IRF MOSFETs

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Filed Under: Datasheets and Components Tagged With: 20A, 500V, Datasheet, IRFP460, MOSFET, Pinouts

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