The IRFP460 MOSFET is an N-channel MOSFET. It is rated for a drain-source breakdown voltage of 500V and a continuous drain current of 20A. This MOSFET is a third-generation device designed with fast switching and low on-resistance in mind. Specifically, it has a maximum drain-source on-state resistance of 0.27 Ohms.
Table of Contents
Basically this IRFP460 MOSFET is suitable for switching applications at high voltages making it ideal for use in switch mode power supplies, DC-to-DC converters, motor drivers, inverters, and other power conversion applications.
It can handle up to 80A pulses and can dissipate 280W of power if adequate cooling is provided.
IRFP460 MOSFET Main Characteristics
- Type: N-Channel
- Maximum Drain to Source Voltage: 500 Volts
- Maximum Drain to Source Current: 20 Amps
- Minimum Drain to Source Resistance = 0.27 Ohms
Pinout Details
Absolute Maximum Ratings
| Parameter | Description | Value | Unit |
|---|---|---|---|
| I_D @ T_C = 25°C | Continuous Drain Current at 25°C | 20 | A |
| I_D @ T_C = 100°C | Continuous Drain Current at 100°C | 13 | A |
| I_DM | Pulsed Drain Current (short bursts) | 80 | A |
| P_D @ T_C = 25°C | Maximum Power Dissipation | 280 | W |
| Linear Derating Factor | Power dissipation reduction per °C above 25°C | 2.2 | W/°C |
| V_GS | Maximum Gate-to-Source Voltage | ±20 | V |
| E_AS | Single Pulse Avalanche Energy | 960 | mJ |
| I_AR | Avalanche Current (short duration) | 20 | A |
| E_AR | Repetitive Avalanche Energy | 28 | mJ |
| dv/dt | Peak Diode Recovery Rate | 3.5 | V/ns |
| T_J, T_STG | Operating & Storage Temperature Range | -55 to 150 | °C |
| Soldering Temperature | Max soldering temperature (for 10s, 1.6mm from case) | 300 | °C |
| Mounting Torque | Recommended screw torque for mounting | 10 (1.1) | lbf-in (N·m) |
Thermal Resistance
| Parameter | Description | Typical Value | Max Value | Unit |
|---|---|---|---|---|
| R_θJC | Thermal resistance from junction to case | — | 0.45 | °C/W |
| R_θCS | Thermal resistance from case to sink (greased) | 0.24 | — | °C/W |
| R_θJA | Thermal resistance from junction to ambient | — | 40 | °C/W |
Electrical Characteristics (@ T_J = 25°C)
| Parameter | Description | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| V_(BR)DSS | Drain-to-Source Breakdown Voltage | 500 | — | — | V |
| ΔV_(BR)DSS/ΔT_J | Breakdown Voltage Temp. Coefficient | — | 0.63 | — | V/°C |
| R_DS(on) | Static Drain-to-Source On-Resistance | — | — | 0.27 | Ω |
| V_GS(th) | Gate Threshold Voltage | 2.0 | — | 4.0 | V |
| g_fs | Forward Transconductance | 13 | — | — | S |
| I_DSS | Drain-to-Source Leakage Current | — | — | 25 | μA |
| I_GSS | Gate Leakage Current | — | — | ±100 | nA |
| Q_G | Total Gate Charge | — | — | 210 | nC |
| Q_GS | Gate-to-Source Charge | — | 29 | — | nC |
| Q_GD | Gate-to-Drain "Miller" Charge | — | 110 | — | nC |
| t_d(on) | Turn-On Delay Time | — | 18 | — | ns |
| t_r | Rise Time | — | 59 | — | ns |
| t_d(off) | Turn-Off Delay Time | — | 110 | — | ns |
| t_f | Fall Time | — | 58 | — | ns |
| L_D | Internal Drain Inductance | — | 5.0 | — | nH |
| L_S | Internal Source Inductance | — | 13 | — | nH |
| C_iss | Input Capacitance | — | 4200 | — | pF |
| C_oss | Output Capacitance | — | 870 | — | pF |
| C_rss | Reverse Transfer Capacitance | — | 350 | — | pF |
Source-Drain Ratings and Body Diode Characteristics
| Parameter | Description | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| I_S | Continuous Source Current (Body Diode) | — | — | 20 | A |
| I_SM | Pulsed Source Current (Body Diode) | — | — | 80 | A |
| V_SD | Diode Forward Voltage | — | — | 1.8 | V |
| t_rr | Reverse Recovery Time | 570 | — | 860 | ns |
| Q_rr | Reverse Recovery Charge | 5.7 | — | 8.6 | μC |
| t_on | Forward Turn-On Time | Intrinsic turn-on time is negligible | — | — | — |
Source: IRF MOSFETs
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