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Voltage-Divider Bias in BJT Circuits – More Stability without beta Factor

In the previous bias designs that we learned the bias current ICQ and voltage VCEQ were a function of the current gain (β) of the BJT. But, as we know that β can be vulnerable to temperature changes, particularly for silicon transistors, and also the true value of beta is often not properly identified, it could … Read moreVoltage-Divider Bias in BJT Circuits – More Stability without beta Factor

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