In bipolar junction transistors the factor that determines the sensitivity level of the device to base current, and the amplification level at its collector is called beta or the hFE. […]
Common Emitter Amplifier – Characteristics, Biasing, Solved Examples
This configuration is known as common-emitter configuration because here the emitter is used as the common negative terminal for the input base signal and the output load. In other words, […]
Understanding Common Base Configuration in BJTs
In this section we are going to analyze BJT common-base configuration, and learn regarding its driving point characteristics, reverse saturation current, base to emitter voltage and evaluate the parameters through […]
Bipolar Junction Transistor (BJT) – Construction, and Operational Details
A bipolar transistor or a BJT is a 3 terminal semiconductor device which is able to amplify or switch small signal input voltages and currents to significantly larger output signal […]
Voltage-Divider Bias in BJT Circuits – More Stability without beta Factor
Biasing the terminals of a bipolar transistor using a calculated resistive divider network for ensuring an optimal performance and switching response is called voltage divider biasing. In the previous bias […]
Emitter-Stabilized BJT Bias Circuit
A configuration in which a bipolar junction transistor or a BJT is reinforced with an emitter resistor for enhancing its stability with regards to changing ambient temperatures, is called an […]