In this article we will discuss regarding beta (β) and what is hFE in BJT configurations. We will find the similarity between ac and dc betas, and also prove through formulas why the factor beta is so important in BJT circuits. A BJT circuit in the dc bias mode forms a relationship across its collector and […]
Electronic Devices and Circuit Theory
When we talk about electronic devices it specifically deals with active components like bipolar transistors, mosfets, diodes, opto-couplers, and basically all those electronic parts that work with semiconductors.
In this category we learn elaborately regarding all the theories related to these devices.
For example in BJTs we have various configurations which have different working conditions and factors.
The articles under this section explains all these crucial factors concerned with these semiconductors devices and enlightens us regarding the correct methods of configuring these devices in practical electronic circuit.
By far the most commonly used transistor configuration can be seen in Fig. 3.13 below for both pnp and npn transistors. This configuration is known as common-emitter configuration because the emitter is common, or becomes the reference terminal to both the input and output stages (meaning common to both the base and collector terminals). Just […]
In this section we are going to analyze BJT common-base configuration, and learn regarding its driving point characteristics, reverse saturation current, base to emitter voltage and evaluate the parameters through a practical solved example. In the later parts we will also analyze how to configure a common-base amplifier circuit Introduction The symbols and annotations utilized […]
Introduction During 1904–1947, the vacuum tube was unquestionably the electronic device of great curiosity and growth. In 1904, the vacuum-tube diode was launched by J. A. Fleming. Soon afterwards, in 1906, Lee De Forest enhanced the device with a third feature, known as the control grid, producing the first amplifier, and named as the triode. […]
In the previous bias designs that we learned the bias current ICQ and voltage VCEQ were a function of the current gain (β) of the BJT. But, as we know that β can be vulnerable to temperature changes, particularly for silicon transistors, and also the true value of beta is often not properly identified, it could […]
We have already studied what is DC biasing in transistors, now let’s move ahead and learn how an emitter resistor can be used for improving the stability of a BJT DC bias network. Applying Emitter Stabilized Bias Circuit The inclusion of the emitter resistor to the dc bias of the BJT delivers superior stability, meaning, […]